Method for making a semiconductor device

Details Method for making a semiconductor device Method for making a semiconductor device

1997-02-13

1999-04-27

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257213, 257344, 257351, H01L 2976, H01L 2994

Patent

active

058982078

ABSTRACT:
A semiconductor device with a damage-free insulating layer is fabricated. A method includes the steps of: forming a first insulating layer on a semiconductor substrate, forming a conductive layer on the first insulating layer, patterning the conductive layer to form a gate electrode, forming low-concentration source/drain region by a first ion implantation, removing a portion of the insulating layer positioned under the side end of the gate electrode, forming a second insulating layer over the semiconductor substrate, the second insulating layer is etched to form a sidewall, forming a high-concentration source/drain region by a second ion implantation.

REFERENCES:
patent: 5559352 (1996-09-01), Hsue et al.
patent: 5679968 (1997-10-01), Smayling et al.
M. Takase et al., "Suppressing Ion Implantation Induced Oxide Charging by Utilizing Physically Damaged Oxide Region", The Japan Society of Applied Physics, pp. 410-412 Aug. 26-29, 1996.

Affiliated with

Also associated with

Rating

Method for making a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-686940