Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-07-14
1998-12-22
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427578, 4272557, 438938, 438763, 438624, B05D 306
Patent
active
058516034
ABSTRACT:
A method was achieved for forming a multilayer passivation layer comprised of a silicon oxide/silicon nitride/silicon oxide/silicon nitride by depositing the layers consecutively in a single PECVD system. The method consists of depositing a first SiO.sub.2 layer that serves as a stress-release layer, a thin Si.sub.3 N.sub.4 layer that serves as a buffer layer that minimizes cracking and as a passivation layer that prevents mobile alkaline ion penetration, a thin second SiO.sub.2 layer to fill and seal any remaining cracks and pinholes in the first Si.sub.3 N.sub.4 layer, and a main Si.sub.3 N.sub.4 passivation layer that prevents water and/or other corrosive chemicals from attacking the metal. Since this multilayer passivation layer can be deposited essentially pinhole-free to a thickness that is less than the prior art's passivation layer of 8000 Angstroms needed to prevent pinholes, it can be used on 0.38 to 0.25 um DRAM technology, which eliminates voids that could otherwise trap photoresist which can later cause corrosion of the metal lines.
REFERENCES:
patent: 4692786 (1987-09-01), Lindenfelser
patent: 4707721 (1987-11-01), Ang et al.
patent: 5393709 (1995-02-01), Lur et al.
patent: 5677562 (1997-10-01), Korwin-Pawlowski et al.
Cheng Shiang-Peng
Liaw Ing-Ruey
Tsai Kwong-Jr
Tu Yeur-Luen
Ackerman Stephen B.
King Roy V.
Saile George O.
Vanguard International Semiconductor Corporation
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