Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-12-05
2006-12-05
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S313000, C430S005000
Reexamination Certificate
active
07144685
ABSTRACT:
A method of forming a latent image pattern in a photoresist film by providing a photomask for near-field light exposure that includes a transparent support and a shading member having a pattern of at least two apertures with different widths not greater than the wavelength of light from a light source. The shading member has a constant thickness that is set such that differences between light intensities directly below each of the apertures of different widths are 20% or less based on a largest light intensity of the light intensities directly below each of the apertures. The method includes placing the photomask on the photoresist film and irradiating with light from the light source. For manufacturing a semiconductor device, the method further includes developing a photoresist pattern from the latent image in the photoresist film on a silicon substrate and transferring the photoresist pattern onto the silicon substrate by etching.
REFERENCES:
patent: 6187482 (2001-02-01), Kuroda et al.
patent: 6338924 (2002-01-01), Tsuruma et al.
patent: 2001/0046719 (2001-11-01), Yamaguchi et al.
patent: 1 150 162 (2001-10-01), None
patent: 8-179493 (1996-07-01), None
patent: 2000-314955 (2000-11-01), None
patent: 2001-5168 (2001-01-01), None
Inao Yasuhisa
Mizutani Natsuhiko
Rosasco S.
Ruggles John
LandOfFree
Method for making a pattern using near-field light exposure... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making a pattern using near-field light exposure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a pattern using near-field light exposure... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3684599