Semiconductor device manufacturing: process – Having superconductive component
Patent
1999-11-18
2000-12-26
Clark, Sheila V.
Semiconductor device manufacturing: process
Having superconductive component
505 1, H01L 2100
Patent
active
061658014
ABSTRACT:
A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.
REFERENCES:
patent: 5084437 (1992-01-01), Talvacchio
patent: 5135908 (1992-08-01), Yang et al.
patent: 5164359 (1992-11-01), Calviello et al.
Barfknecht Andrew T.
Burns Michael J.
Clayton Stanley R.
de la Houssaye Paul R.
Garcia Graham A.
Clark Sheila V.
Diaz José R.
Fendelman Harvey
Kagan Michael A.
The United States of America as represented by the Secretary of
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