Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-11-10
2008-03-11
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21314
Reexamination Certificate
active
07341960
ABSTRACT:
A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.
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Huang Jung-Jie
Lee Ming-Kwei
Wu Tsung-Shiun
Yen Chih-Feng
Anya Igwe U.
Baumeister B. William
Christie Parker & Hale LLP
National Sun Yat-Sen University
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