Method for making a heterojunction bipolar transistor

Details Method for making a heterojunction bipolar transistor Method for making a heterojunction bipolar transistor

1996-03-04

1997-04-15

Tsai, Jey

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

257200, 438489, 438532, 438555, H01L 21265

Patent

active

056209070

ABSTRACT:
A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The extrinsic base portion substantially comprises polycrystalline material, and contains a distribution of ion-implanted impurities. An emitter overlies the intrinsic base portion, and a spacer at least partially overlies the emitter. The spacer overhangs the extrinsic base portion by at least a distance characteristic of lateral straggle of the ion-implanted impurities.

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