Method for making a FET channel

Details Method for making a FET channel Method for making a FET channel

2007-04-03

2007-04-03

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S142000, C438S164000, C257S903000

Reexamination Certificate

active

11137811

ABSTRACT:
A channel16of a FinFET10has a channel core24and a channel envelope32, each made from a semiconductor material defining a different lattice structure to exploit strained silicon properties. A gate is coupled to the channel envelope through a gate dielectric. Exemplary materials are Si and SixGe1-x, wherein 78<x<92. The channel core24has a top surface26of width wcand an upstanding surface28, 30of height hc, preferably oriented 90° to one another. The channel envelope32is in contact with the top26and upstanding surfaces28, 30so that the area of interface is increased as compared to contact only along the top surface26, improving electrical conductivity and gate18control over the channel16. The height hccan be tailored to enable a smaller scale FET10within a stabilized SRAM. Various methods of making the channel16are disclosed, including a mask and etch method, a handle wafer/carrier wafer method, and a shallow trench method. Embodiments and methods for FinFETs with one to four gates are disclosed.

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