Method for making a capacitor having an electrode surface with a

Fishing – trapping – and vermin destroying

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437 60, 437919, H01L 2170, H01L 2700

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active

053507070

ABSTRACT:
The present invention provides a semiconductor device having a capacitor that is formed through: a first step of forming a polysilicon layer having a rough surface after a nonconductive layer is applied to a base substrate; a second step of etching back away the polysilicon layer to expose the nonconductive layer and thus remaining islandlike polysilicon layers; a third step of etching the nonconductive layer, using the remained polysilicon layers as an etching mask; a fourth step of etching the base substrate of the capacitor, using the nonconductive layer as a mask; a fifth step of forming a pattern of the base substrate of the capacitor after the removal of the remained nonconductive layer; a sixth step of forming an upper substrate of the capacitor after the formation of a dielectric film of the capacitor. According to this invention, the surface area of the capacitor electrode is remarkably enhanced such that the integrity of DRAMs is more improved.

REFERENCES:
patent: 5149676 (1992-09-01), Kim
patent: 5204280 (1993-04-01), Dhong et al.
patent: 5223448 (1993-06-01), Su
patent: 5227322 (1993-07-01), Ko et al.
patent: 5256587 (1993-10-01), Jun et al.
Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode Hayashide et al., Extended Abst. 22nd. Int'l Conf. Solid State Devices and Mat'l, Japan J. Appl. Phys., Tokyo, Japan (1990), pp. 869-872.

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