Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2009-10-28
2011-10-04
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S096000, C438S308000, C438S482000, C257SE21497
Reexamination Certificate
active
08030189
ABSTRACT:
A method for maintaining a smooth surface of crystallizable material is disclosed. First, a substrate is provided. A target material layer is then formed on the substrate, with the target material being a crystallizable material. A protecting layer is subsequently formed on the target material layer. Next, an annealing treatment is implemented, with the surface of the target material layer, facing the protecting layer, being maintained in its original smooth state by the pressure and/or adhesion of the protecting layer. Finally, the protecting layer is removed to leave an open and smooth surface of the processed crystallizable material.
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Chao Cha-Hsin
Lin Ching-Fuh
Lin Wen-Han
Lee Cheung
Lindsay, Jr. Walter L
National Taiwan University
Stout, Uxa Buyan & Mullins, LLP
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