Method for low temperature selective growth of silicon or silico

Details Method for low temperature selective growth of silicon or silico Method for low temperature selective growth of silicon or silico

1995-02-17

1996-10-15

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117935, 148DIG106, 437 89, H01L 2120

Patent

active

055650317

ABSTRACT:
Epitaxial and polycrystalline layers of silicon and silicon-germanium alloys are selectively grown on a semiconductor substrate or wafer by forming over the wafer a thin film masking layer of an oxide of an element selected from scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium; and then growing the epitaxial layer over the wafer at temperatures below 650.degree. C. The epitaxial and polycrystalline layers do not grow on the masking layer. The invention overcomes the problem of forming epitaxial layers at temperatures above 650.degree. C. by providing a lower temperature process.

REFERENCES:
patent: 3206339 (1965-09-01), Thornton
patent: 3424627 (1969-01-01), Michel et al.
patent: 3663870 (1972-05-01), Tsutsumi et al.
patent: 4350729 (1982-09-01), Nakano et al.
patent: 4479297 (1984-10-01), Mizutani et al.
patent: 4495219 (1985-01-01), Kato et al.
patent: 4526629 (1985-07-01), Latta et al.
patent: 4661176 (1987-04-01), Manasevit
patent: 5181964 (1993-01-01), Meyerson
patent: 5227330 (1993-07-01), Agnello et al.
patent: 5262348 (1993-11-01), Pribat et al.
patent: 5292402 (1994-03-01), Abt et al.
patent: 5298452 (1994-03-01), Meyerson

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