Method for low power sensing in a multi-port SRAM using...

Details Method for low power sensing in a multi-port SRAM using... Method for low power sensing in a multi-port SRAM using...

2011-05-10

2011-05-10

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Read/write circuit

Particular read circuit

C365S204000, C365S203000, C365S230050, C365S227000, C365S208000, C365S190000, C365S156000, C365S154000

Reexamination Certificate

active

07940581

ABSTRACT:
A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential.

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patent: 2004/0243758 (2004-12-01), Notani
patent: 2007/0263435 (2007-11-01), Nii

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