Method for low power accessing a phase change memory device

Details Method for low power accessing a phase change memory device Method for low power accessing a phase change memory device

2011-01-11

2011-01-11

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S163000, C365S171000, C365S173000

Reexamination Certificate

active

07869267

ABSTRACT:
A method for accessing a phase change memory device, wherein a first sub-plurality of bitlines is grouped in a first group and a second sub-plurality of bitlines is grouped in a second group. At least a bitline in the first and second groups are selected; currents are supplied to the selected bitlines; and a selected wordline is biased. The bitlines are selected by selecting a first bitline in the first group and, while the first bitline is selected, selecting a second bitline in the second group which is arranged on the selected wordline symmetrically to the first bitline in the first group.

REFERENCES:
patent: 7203087 (2007-04-01), Resta et al.
patent: 7283387 (2007-10-01), Cho et al.
patent: 7778079 (2010-08-01), Jeong et al.

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