Method for local wafer thinning and reinforcement

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

Reexamination Certificate

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C438S977000, C257SE21530

Reexamination Certificate

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07314767

ABSTRACT:
A method is provided for preparing a semiconductor wafer for testing. The method includes selecting a die to be tested; measuring a diagonal of the die; thinning an area over the die extending beyond the scribe lines, the thinned area may be a circular area having a diameter that is larger than the measured diagonal; providing an insert inside the thinned area; and providing an adhesive on the peripheral area of the insert so as not to obscure the optical path to the die. The insert is advantageously made of an undoped silicon.

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Dynamics of Backside Wafer Level Microprobing, Chin-Lang Chiang and Daniel T. Hurley, International Reliability Physics Symposium, IEEE, 1998.

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