Method for local oxidation of silicon (LOCOS) field isolation

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438439, 438297, 438692, 438764, H01L 21469

Patent

active

060907274

ABSTRACT:
A method for forming field oxide comprises the steps of forming a pad oxide layer over a semiconductor substrate, then forming a silicon layer over the pad oxide layer. A patterned mask is formed over the silicon layer and the silicon layer is etched to form openings in the silicon layer. Next, a blanket nitride layer is formed over the silicon and within the openings, and the nitride layer is then planarized to remove the nitride which overlies the silicon which leaves the nitride in the openings. Subsequent to the step of planarizing the nitride, the silicon layer is removed thereby forming openings in the nitride layer. The substrate is oxidized at the openings in the nitride layer to form field oxide from the substrate.

REFERENCES:
patent: 4462846 (1984-07-01), Varshney
patent: 4818235 (1989-04-01), Chao
patent: 4968641 (1990-11-01), Kalnitsky et al.
patent: 5212111 (1993-05-01), Doan et al.
patent: 5215935 (1993-06-01), Nagao
patent: 5266523 (1993-11-01), Manning
patent: 5358892 (1994-10-01), Rolfson
patent: 5393694 (1995-02-01), Mathews
patent: 5405788 (1995-04-01), Manning et al.
patent: 5654227 (1997-08-01), Gonzalez et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for local oxidation of silicon (LOCOS) field isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for local oxidation of silicon (LOCOS) field isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for local oxidation of silicon (LOCOS) field isolation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2036659

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.