Method for lifting-off epitaxial films

Details Method for lifting-off epitaxial films Method for lifting-off epitaxial films

1988-03-29

1989-07-11

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156662, 350 9612, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048469319

ABSTRACT:
A method for removing epitaxial films from a single crystal substrate upon which it is grown comprising (a) providing a thin release layer (.ltoreq.1000A) between the film to be grown and the substrate; (b) growing the epitaxial film(s); (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away.

REFERENCES:
M. Konagai et al., "High Efficiency GaAs Thin Film Solar Cells by Peeled Film Technology," Journal of Crystal Growth, 45, pp. 277-280 (1978).
K. Y. Lee et al., "Fabrication of Ultrasmall Devices on Thin Active GaAs Membrane," J. Vac. Sci. Technol. B5(1), 322-325, Jan./Feb. (1987).
J. C. C. Fan, "Thin Films of III-V Compounds and Their Applications," Journal de Physique, 43, Ci-327 (1982).
D. L. Miller et al., "GaAs Peeled Film Solar Cells," Document #MRDC41056.49 FRD, Final Report Draft for the period 3/15/80-12/31/81 prepared for Solar Energy Research Institute under subcontract No. X5-0-9002-2.
Yablonovitch et al., "Extreme Selectrivity in the Lift-Off of Epitaxial GaAs Films" Appl. Phys. Letters, 51(26) 2222-2224 (Dec. 28, 1987).

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