Method for lead frame etching

Details Method for lead frame etching Method for lead frame etching

1998-02-18

1999-08-31

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430312, 430323, 216 14, 216 17, 216 47, G03F 700, H01L 2148

Patent

active

059452595

ABSTRACT:
A lead frame etching method, which is used for a semiconductor device assembling process and prevents a sharp-edged portion formed on each lateral end of a lead frame material. The method includes the steps of forming a first photoresist pattern defining the actual etching region, on both surfaces of a lead frame material, forming a second photoresist pattern as an etching buffer extending from lateral ends of the first photoresist pattern, on both surfaces of the lead frame material on which the first photoresist pattern is formed, etching the lead frame material using the second photoresist pattern as an etching mask, removing the second photoresist pattern from the etched lead frame material, etching the lead frame material using the first photoresist pattern as an etching mask, and removing the first photoresist pattern from the twice-etched lead frame material.

REFERENCES:
patent: 5652084 (1997-07-01), Cleeves
patent: 5667940 (1997-09-01), Hsue et al.
patent: 5683943 (1997-11-01), Yamada

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