Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-04-10
1994-10-11
Nelson, Peter A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
437 19, B44C 122
Patent
active
053544200
ABSTRACT:
An etching process allows a selective single-step patterning of III-V or II-VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost.
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Orazi Richard J.
Russell Stephen D.
Sexton Douglas A.
Fendelman Harvey
Keough Thomas Glenn
Nelson Peter A.
The United States of America as represented by the Secretary of
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