Method for isolating elements of semiconductor device

Details Method for isolating elements of semiconductor device Method for isolating elements of semiconductor device

1996-11-01

1998-02-17

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438445, 438452, 438775, H01L 2176

Patent

active

057190860

ABSTRACT:
A method for isolating the elements of semiconductor devices, in which bird's beak can be restrained by accumulating nitrogen atoms between a pad oxide film and a silicon substrate and the etch depth of a silicon substrate can be controlled by use of wet etch to remove the oxide which is grown on the silicon substrate at a low temperature after formation of nitride spacer, thereby reproducing good profiles of the field oxide film.

REFERENCES:
patent: 5087586 (1992-02-01), Chan et al.
patent: 5256895 (1993-10-01), Bryant et al.
patent: 5298451 (1994-03-01), Rao
patent: 5399520 (1995-03-01), Jang

Affiliated with

Also associated with

Rating

Method for isolating elements of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for isolating elements of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for isolating elements of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1783744