Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2008-01-15
2008-01-15
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C714S718000, C714S720000
Reexamination Certificate
active
10981026
ABSTRACT:
According to one exemplary embodiment, a method for isolating a failure site in a leaky wordline in a memory array includes dividing said leaky wordline into an initial leaky wordline portion and an initial non-leaky wordline portion, where the initial leaky wordline portion has wordline-to-substrate leakage. The initial leaky wordline portion can be determined by using a passive voltage contrast procedure to illuminate the initial leaky wordline portion. The method further includes performing a number of division and identification cycles on the initial leaky wordline portion to determine a final leaky wordline portion. According to this exemplary embodiment, the final leaky wordline portion comprises a predetermined number of memory cells. The method further includes performing a cutting and imaging procedure on the final leaky wordline portion to isolate the failure site.
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Gray Andy
Li Susan Xia
Yuan Caiwen
Farjami & Farjami LLP
Nguyen Viet Q.
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