Method for ion treating a semiconductor material for...

Details Method for ion treating a semiconductor material for... Method for ion treating a semiconductor material for...

2006-06-06

2006-06-06

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000

Reexamination Certificate

active

07056809

ABSTRACT:
The invention relates to a manufacturing process of detachable substrates, the said process comprising a surface condition adjustment treatment of at least one of two layers of material, followed by the reversible bonding of the surfaces of the two layers to make the detachable substrate, characterised in that the said surface condition adjustment treatment comprises the bombardment of the surface to be treated with ion clusters.

REFERENCES:
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5869354 (1999-02-01), Leedy
patent: 6153495 (2000-11-01), Kub et al.
patent: 6180496 (2001-01-01), Farrens et al.
patent: 6190778 (2001-02-01), Batz-Sohn et al.
patent: 2002/0014407 (2002-02-01), Allen et al.
patent: 2002/0139772 (2002-10-01), Fenner
patent: 2004/0112866 (2004-06-01), Maleville et al.
patent: 2005/0042800 (2005-02-01), Yamada et al.
patent: 2 823 596 (2002-10-01), None
patent: 2 823 599 (2002-10-01), None
patent: WO 99/10927 (1999-03-01), None
patent: WO 01/61743 (2001-08-01), None

Affiliated with

Also associated with

Rating

Method for ion treating a semiconductor material for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for ion treating a semiconductor material for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for ion treating a semiconductor material for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3643843