Method for introduction of an impurity dopant in SiC, a semicond

Details Method for introduction of an impurity dopant in SiC, a semicond Method for introduction of an impurity dopant in SiC, a semicond

1995-05-08

1998-12-22

Niebling, John F.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438931, H01L 21265

Patent

active

058519084

ABSTRACT:
A method for introduction of an impurity dopant into a semiconductor layer of SiC comprises the step of ion implantation of the dopant in the semiconductor layer at a low temperature. The ion implantation is carried out in such a way that a doped and amorphous near-surface layer is formed, and the implantation step is followed by a step of annealing the semiconductor layer at such a high temperature that the dopant diffuses into the non-implanted sub-layer of the semiconductor layer following the near-surface layer.

REFERENCES:
patent: 3563817 (1971-02-01), Chang et al.
patent: 3629011 (1971-12-01), Tohi et al.
patent: 3829333 (1974-08-01), Tohi et al.
patent: 4789644 (1988-12-01), Meda
patent: 5030580 (1991-07-01), Furukawa et al.
patent: 5087576 (1992-02-01), Edmond et al.
patent: 5270244 (1993-12-01), Baliga
patent: 5286660 (1994-02-01), Chiou et al.
patent: 5322802 (1994-06-01), Baliga et al.
patent: 5364810 (1994-11-01), Kosa et al.
patent: 5459089 (1995-10-01), Baliga
Ahmed et al., Boron and Aluminum Implantation in .alpha.SiC, Appl. Phys. Lett 65(1), pp. 67-69, Jul. 1994.
Kalinina et al., Structure and Properties of Ion-Implantation-doped p-n Junctions in Sic, Sov. Phys. Semicond. 14(6), pp. 652-654, Jun. 1980.
Vodakov et al., Electrical properties of a p-n-n+ Structure Formed in Silicon Carbide by Implantation of Aluminum Ions, Sov. Phys. Semicond. 21(9), pp. 1017-1020, Sep. 1987.
Rao et al., Al and B Ion-Implantations in 6H- and 3C-SiC, J. Appl. Phys. 77(6), pp. 2479-2485, Mar. 1995.

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