Method for introduction of an impurity dopant in SiC, a semicond

Details Method for introduction of an impurity dopant in SiC, a semicond Method for introduction of an impurity dopant in SiC, a semicond

1998-07-15

2000-08-01

Booth, Richard

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438931, H01L 21265

Patent

active

060966270

ABSTRACT:
A method for introducing an impurity dopant into a semiconductor layer of SiC is provided. Ions are implanted into the semiconductor layer so that a near surface of the semiconductor layer becomes doped and amorphous. The semiconductor layer is then annealed at a temperature so that the dopant diffuses into a non-implanted sublayer of the semiconductor layer below the near surface layer.

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