Method for interconnecting metallic layers

Details Method for interconnecting metallic layers Method for interconnecting metallic layers

1983-09-07

1984-05-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29591, 156644, 156646, 156653, 156656, 156657, 1566591, 204192E, 357 71, 427 90, 430317, 430318, C23F 103, B44C 122, C03C 1500, C03C 2506

Patent

active

044513267

ABSTRACT:
A method for forming multiple conductive interconnect layers on a semiconductor device comprises defining a first conductive metal layer, applying a first insulating layer thereon, planarizing the first insulating layer by etching a sacrificial planarization layer, applying a second insulating layer, forming vias through first and second insulating layers and applying a second conductive layer thereon. Optionally, a third insulating layer can be applied over the first two and stepped vias formed to improve the interconnection of the first and second layers. The method reduces metallization failure associated with irregularities in the intermediate insulating layers.

REFERENCES:
patent: 4076575 (1978-02-01), Chang
patent: 4164461 (1979-08-01), Schilling
patent: 4172004 (1979-10-01), Alcorn et al.
patent: 4184909 (1980-01-01), Chang et al.
patent: 4415606 (1983-11-01), Cynkar

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