Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2009-12-24
2011-11-22
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257S369000, C257SE27062, C257S204000, C257SE21635, C438S229000, C438S153000, C438S188000, C438S199000, C438S240000
Reexamination Certificate
active
08062966
ABSTRACT:
Semiconductor devices and fabrication methods are provided, in which metal transistor replacement gates are provided for CMOS transistors. The process provides dual or differentiated work function capability (e.g., for PMOS and NMOS transistors) in CMOS processes.
REFERENCES:
patent: 2007/0037343 (2007-02-01), Colombo et al.
patent: 2009/0186458 (2009-07-01), Yu et al.
Chambers James J.
Mehrad Freido
Yu Shaofeng
Brady III Wade J.
Diallo Mamadou
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Toledo Fernando L
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