Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-15
2011-03-15
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S350000, C257SE21415, C257SE29295
Reexamination Certificate
active
07906381
ABSTRACT:
A method is provided for fabricating transistors of first and second types in a single substrate. First and second active zones of the substrate are delimited by lateral isolation trench regions, and a portion of the second active zone is removed so that the second active zone is below the first active zone. First and second layers of semiconductor material are formed on the second active zone, so that the second layer is substantially in the same plane as the first active zone. Insulated gates are produced on the first active zone and the second layer. At least one isolation trench region is selectively removed, and the first layer is selectively removed so as to form a tunnel under the second layer. The tunnel is filled with a dielectric material to insulate the second layer from the second active zone of the substrate. Also provided is such an integrated circuit.
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Dutartre Didier
Loubet Nicolas
Monfray Stéphane
Bongini Stephen
Fleit Gibbons Gutman Bongini & Bianco P.L.
Jorgenson Lisa K.
Le Thao X
STMicroelectronics (Crolles 2) SAS
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