Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-11
2010-11-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S641000, C438S643000, C438S675000, C438S677000, C438S687000, C257SE21584, C257SE21586
Reexamination Certificate
active
07829454
ABSTRACT:
A method for integrating selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu. The method includes selectively depositing a Ru metal film on a metallization layer or on bulk Cu using a process gas containing Ru3(CO)12precursor vapor and a CO gas in a thermal chemical vapor deposition process. A semiconductor device containing one or more selectively deposited Ru metal films is described.
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Fourson George
Tokyo Electron Limited
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