Method for integrating copper process and MIM capacitor for...

Details Method for integrating copper process and MIM capacitor for... Method for integrating copper process and MIM capacitor for...

2005-02-01

2005-02-01

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S314000, C430S319000, C430S329000, C361S313000, C257S508000, C257S532000, C438S241000, C438S672000, C438S210000, C438S239000, C438S636000

Reexamination Certificate

active

06849387

ABSTRACT:
A method for integrating copper with an MIM capacitor during the formation the MIM capacitor. The MIM capacitor is generally formed upon a substrate and at least one copper layer is deposited upon the substrate and layers thereof to form at least one metal layer from which the MIM capacitor is formed, such that the MIM capacitor may be adapted for use with an embedded DRAM device. The MIM capacitor comprises a low-temperature MIM capacitor. At least one DRAM crown photo layer may be formed upon the substrate and layers thereof to form the MIM capacitor. The number of additional lithographic steps required in BEOL manufacturing operations is thus only one, while the capacitance of the MIM capacitor can be improved greatly because the sequential process of the DRAM crown photo patterning steps may be altered.

REFERENCES:
patent: 6271084 (2001-08-01), Tu et al.
patent: 6656785 (2003-12-01), Chiang et al.

Affiliated with

Also associated with

Rating

Method for integrating copper process and MIM capacitor for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for integrating copper process and MIM capacitor for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for integrating copper process and MIM capacitor for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3501163