Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-29
2008-10-07
Everhart, Caridad M (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21170, C257SE21311, C438S681000, C438S733000
Reexamination Certificate
active
07432195
ABSTRACT:
A method of integrated processing of a patterned substrate for copper metallization. The method includes providing the patterned substrate containing a via and a trench in a vacuum processing tool, and performing an integrated process on the patterned substrate in the vacuum processing tool by depositing a first metal-containing layer over the patterned substrate, removing by sputter etching the first metal-containing layer from the bottom of the via and at least partially removing the first metal-containing layer from the bottom of the trench, depositing a conformal Ru layer onto the sputter etched first metal-containing layer, depositing a non-conformal Cu layer on the conformal Ru layer, and plating Cu over the patterned substrate. According to one embodiment of the invention, the method can further include depositing a second metal-containing layer onto the sputter etched first metal-containing layer prior to depositing the conformal Ru layer.
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Everhart Caridad M
Tokyo Electron Limited
Wood Herron & Evans LLP
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