Method for inspection of defects on a substrate

Details Method for inspection of defects on a substrate Method for inspection of defects on a substrate

2010-10-25

2011-10-11

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S014000, C438S015000, C438S017000, C438S018000, C438S052000, C257SE21530, C257S315000, C257S048000, C073S105000

Reexamination Certificate

active

08034641

ABSTRACT:
A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.

REFERENCES:
patent: 7107826 (2006-09-01), Watanabe et al.
patent: 2006/0254348 (2006-11-01), Watanabe et al.
patent: 2008/0105043 (2008-05-01), Yasutake et al.
patent: 2003-227788 (2003-08-01), None
patent: 2004-340893 (2004-12-01), None
patent: 10-2008-0057079 (2008-06-01), None

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