Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1996-10-03
1998-10-06
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430 30, 430316, 430394, 430396, G03F 720
Patent
active
058174451
ABSTRACT:
A method for inspecting process defects occurring in a semiconductor device, which utilizes the phenomenon that even when photo shield film patterns are used, patterns of an etchable layer have different dimensions at different positions in a field region. A first etchable layer is patterned using positive photoresist film patterns. Patterns of a negative photoresist film is then formed on the first etchable layer under the condition in which the substrate is misaligned from the light exposure mask by a distance corresponding to either "(n+1/2).times.pitch"or "(n+1/4).times.pitch" (n: a natural number) upon conducting a secondary light exposure for the formation of those patterns. The first etchable layer is then patterned using the negative photoresist film patterns in the form of remaining layers. The defect inspection device measures positions, density and dimensions of the remaining layer portions of the first etchable layer. Accordingly, it is possible to quantitatively measure the difference in critical dimension of the patterns at different positions in the field region. The measured values are fed back to correct an error occurring in the photo shield film patterns of the light exposure mask.
REFERENCES:
patent: 5087537 (1992-02-01), Conway et al.
patent: 5447810 (1995-09-01), Chen et al.
patent: 5506080 (1996-04-01), Adair
patent: 5667940 (1997-09-01), Hsue
Duda Kathleen
Hyundai Electronics Industries Co,. Ltd.
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