Method for inspecting defects of wafer and inspection equipment

Details Method for inspecting defects of wafer and inspection equipment Method for inspecting defects of wafer and inspection equipment

1998-01-15

1999-11-30

Font, Frank G.

Optics: measuring and testing

Inspection of flaws or impurities

3562391, 3562392, 3562397, 3562398, 3562373, 3562372, G01N 2100

Patent

active

059952180

ABSTRACT:
A wafer defect detection apparatus includes a moving device for moving the wafer in a parallel direction to the wafer's surface, a light-emitting device for emitting an incident light on the surface of the wafer, a light-receiving device for receiving a reflected light reflected by the (111) crystal plane of the wafer, and a rotating device for rotating the wafer with respect to a line perpendicular to the wafer surface as a rotation axis, the [001] direction of the wafer being parallel to the normal line direction of the surface of the wafer. The light-emitting device is arranged in the direction tilted by (57.7.degree.-.alpha.) from the rotation axis and the incident light impinges on the position where the rotation axis intersects the surface of the wafer. The light-receiving device is arranged in the direction tilted by (54.7.degree.+.alpha.) in the direction same as that of the light-emitting device from the rotation axis, and the value of .alpha. is -35.3.degree. to 35.3.degree. excluding 0.degree..

REFERENCES:
patent: 4342515 (1982-08-01), Akiba et al.
patent: 5471066 (1995-11-01), Hagiwara
patent: 5602401 (1997-02-01), Broude et al.
patent: 5699447 (1997-12-01), Alumot et al.
Testu Takahashi et al., "Study of nylon processing measurement on the surface of a silicon-wafer (Report No. 4)--detected pattern characteristics of a non-arrival corpuscle --", Paper presented at meeting of Japanese Precision Engineering Society, Spring, 1996, pp. 1118-1121.

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