Method for inspecting a wafer and apparatus for inspecting a...

Details Method for inspecting a wafer and apparatus for inspecting a... Method for inspecting a wafer and apparatus for inspecting a...

2006-10-24

2006-10-24

Pham, Hoa Q. (Department: 2877)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C438S016000, C250S310000

Reexamination Certificate

active

07126357

ABSTRACT:
Disclosed are a method and apparatus for inspecting a wafer for electrical defects. A first electron beam is irradiated onto an area of the wafer including an inspection region to charge the area. A second electron beam is irradiated onto the inspection region to inspect the inspection region after focusing the second electron beam on the inspection region. A third electron beam is irradiated onto the area to discharge charges accumulated on the area. Therefore, the electrical defect of the wafer can be precisely detected with increased voltage contrasts for distinguishing the electrical defect. This method and apparatus have improved detection sensitivity and detection reliability over conventional methods.

REFERENCES:
patent: 5892224 (1999-04-01), Nakasuji
patent: 6091249 (2000-07-01), Talbot et al.
patent: 6384909 (2002-05-01), Tomita et al.
patent: 6586952 (2003-07-01), Nozoe et al.
patent: 6828571 (2004-12-01), McCord et al.

Affiliated with

Also associated with

Rating

Method for inspecting a wafer and apparatus for inspecting a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for inspecting a wafer and apparatus for inspecting a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for inspecting a wafer and apparatus for inspecting a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3717770