Method for initializing resistance-variable material, memory...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S154000, C365S156000

Reexamination Certificate

active

10583518

ABSTRACT:
An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 2003/0003674 (2003-01-01), Hsu et al.
patent: 1 418 592 (2004-05-01), None
Liu S Q, et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films,” Applied Physics Letters, May 8, 2000, pp. 2749-2751, American Institute of Physics, New York.
Rozenberg M J, et al., “Nonvolatile memory with multilevel switching: A basic model,” Physical Review Letters, Apr. 30, 2004, pp. 178302-1-178302-4, vol. 92, No. 17.

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