Method for increasing the refresh time of the DRAM

Details Method for increasing the refresh time of the DRAM Method for increasing the refresh time of the DRAM

1996-10-09

1999-03-16

Tsai, Jey

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438407, H01L 2176

Patent

active

058829849

ABSTRACT:
The present invention is a method for increasing the refresh time of DRAM. This invention is for decreasing the stress between the bird's beak of field oxide and silicon substrate by using fluorine ion implant before field oxidation and the optimal structure of LOCOS to effectively preventing the current leakage from the bird's beak of field oxide. Therefore, this invention can increase the refresh time of DRAM and greatly enhance the performance in DRAM.

REFERENCES:
patent: 5019526 (1991-05-01), Yamane et al.
patent: 5338691 (1994-08-01), Enomoto et al.
patent: 5372951 (1994-12-01), Anjum et al.
patent: 5496754 (1996-03-01), Bergemont et al.
patent: 5614421 (1997-03-01), Yang
patent: 5672539 (1997-09-01), Thakur et al.

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