Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2005-08-04
2009-11-24
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S017000, C438S082000, C438S149000
Reexamination Certificate
active
07622323
ABSTRACT:
A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioffratio.
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Jeong Eun Jeong
Kim Chang Ju
Koo Bon Won
Lee Eun Kyung
Lee Sang Yoon
Harness & Dickey & Pierce P.L.C.
Lebentritt Michael S
Samsung Electronics Co,. Ltd.
Whalen Daniel
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