Method for increasing gate capacitance by using both high and lo

Details Method for increasing gate capacitance by using both high and lo Method for increasing gate capacitance by using both high and lo

1998-03-31

2000-07-11

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438216, 438264, 438287, 438240, 438591, H01L 2960, H01L 2128

Patent

active

06087208&

ABSTRACT:
A method for fabricating a MOSFET device is provided. The method includes a step of fining a gate oxide including first and second gate oxide materials. The first gate oxide material has a higher dielectric constant than the second gate oxide material. The first gate oxide material is formed to be over source/drain extension regions of the device; and the second gate oxide material is formed over a channel region of the device. The first gate oxide material has a low dielectric constant and provides for mitigating gate fringing field effects. The second gate oxide material has a high dielectric constant and provides for forming a thick gate oxide over a channel region of the device. Controlled uniform growth of the second gate oxide material is facilitated because of the thickness thereof.

REFERENCES:
patent: 4590509 (1986-05-01), Esser et al.
patent: 4694564 (1987-09-01), Enoki
patent: 4711701 (1987-12-01), McLevige
patent: 4735919 (1988-04-01), Faraone
patent: 4782031 (1988-11-01), Hagio
patent: 4975382 (1990-12-01), Takasugi
patent: 5290609 (1994-03-01), Horiike
patent: 5347153 (1994-09-01), Bakeman, Jr.
patent: 5374575 (1994-12-01), Kim
patent: 5545578 (1996-08-01), Park et al.
patent: 5554544 (1996-09-01), Hsu
patent: 5596218 (1997-01-01), Soleimani et al.
patent: 5712816 (1998-01-01), Cappelletti et al.
patent: 5714781 (1998-02-01), Yamamoto et al.
patent: 5733806 (1998-03-01), Grivna
patent: 5834353 (1998-11-01), Wu
patent: 5854097 (1998-12-01), Ohmi
patent: 5858843 (1999-01-01), Doyle
patent: 5872031 (1999-02-01), Mishra
patent: 5876788 (1999-03-01), Bronner
patent: 5880508 (1999-03-01), Wu
patent: 5930584 (1999-07-01), Sun
patent: 5972752 (1999-10-01), Hong

Affiliated with

Also associated with

Rating

Method for increasing gate capacitance by using both high and lo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for increasing gate capacitance by using both high and lo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for increasing gate capacitance by using both high and lo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-541647