Method for increasing etch rate during deep silicon dry etch

Details Method for increasing etch rate during deep silicon dry etch Method for increasing etch rate during deep silicon dry etch

2007-05-31

2009-06-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S427000, C438S424000, C438S553000, C438S555000

Reexamination Certificate

active

07544592

ABSTRACT:
A method of increasing etch rate during deep silicon dry etch by altering the geometric shape of the etch mask is presented. By slightly altering the shape of the etch mask, the etch rate is increased in one area where an oval etch mask is used as compared to another areas where different geometrically-shaped etch masks are used even though nearly the same amount of silicon is exposed. Additionally, the depth of the via can be controlled by using different geometrically-shaped etch masks while maintaining virtually the same size in diameter for all the vias.

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