Method for increasing breaking down voltage of lateral...

Details Method for increasing breaking down voltage of lateral... Method for increasing breaking down voltage of lateral...

2009-04-28

2010-10-26

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S492000

Reexamination Certificate

active

07821082

ABSTRACT:
A lateral diffused metal oxide semiconductor transistor is disclosed. A p-type bulk is disposed on a substrate. An n-type well region is disposed in the p-type bulk. A plurality of field oxide layers are disposed on the p-type bulk and the n-type well region. A gate structure is disposed on a portion of the p-type bulk and one of the plurality of field oxide layers. At least one deep trench isolation structure is disposed in the p-type bulk and adjacent to the n-type well region.

REFERENCES:
patent: 6855581 (2005-02-01), Roh et al.
patent: 7122876 (2006-10-01), Wu et al.

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