Method for in-situ uniformity optimization in a rapid...

Details Method for in-situ uniformity optimization in a rapid... Method for in-situ uniformity optimization in a rapid...

2007-04-17

2007-04-17

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S054000, C438S906000, C438S715000, C257SE21082

Reexamination Certificate

active

10976710

ABSTRACT:
The present invention is directed to a method for thermally processing a substrate in a thermal processing system. The method provides an amount of heat to the substrate and obtains information associated with the substrate when the amount of heat is provided. For example, the substrate is provided at a presoak position within the thermal processing system, wherein the presoak position, and one or more properties associated with the substrate, such as a position and temperature, are measured. An optimal process parameter value to provide an optimal thermal uniformity of the substrate is then determined, based, at least in part, on the information obtained from the substrate. For example, a soak position of the substrate is determined, wherein the determination is based, at least in part, on the one or more measured properties associated with the substrate, and a thermal uniformity associated with a reference data set.

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patent: 2003/0087787 (2003-05-01), Man et al.
U.S. Appl. No. 10/732,161, filed Dec. 10, 2003, Matthews et al.

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