Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1997-11-06
2000-03-28
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438478, 438507, 438971, 117956, 117957, H01L 2120
Patent
active
060431415
ABSTRACT:
A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is established at a surface of the lattice. The method further includes the steps of generating an elemental Group V flux by evaporating an elemental Group V material and providing the elemental Group V flux to a Group VI sublattice of the lattice.
REFERENCES:
L. He et al., "Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped HgCdTe on (100) CdZnTe", J. Appl. Phys. 73(7) pp. 3305-3312, Apr. 1993.
S.H. Shin, "Annealing effect on the p-type carrier concentration in low-temperature processed arsenic doped HgCdTe", J. Elect. Matl. 22 (8) pp. 1039-1047, Aug. 1993.
Rajavel Rajesh D.
Wu Owen K.
Bowers Charles
Christianson Keith
Duraiswamy V. D.
Hughes Electronics Corporation
Sales M. W.
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