Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-25
2007-09-25
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S063000, C257SE21170, C257SE21165, C257SE21182, C257SE21593, C257SE21632
Reexamination Certificate
active
11171097
ABSTRACT:
An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form the contact surface of the source and drain regions. The interface of the silicon germanium and the nickel silicon germanium silicide has a lower specific contact resistivity based on a decreased metal-semiconductor work function between the silicon germanium and the silicide and the increased carrier mobility in silicon germanium versus silicon. The silicon germanium may be doped to further tune its electrical properties. A reduction of the external resistance of a transistor equates to increased transistor performance both in switching speed and power consumption.
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Boyanov Boyan
Glass Glenn A.
Hoffmann Thomas
Murthy Anand
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nhu David
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