Method for improving the wet process chemical sequence

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

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756906, 134 3, H01L 2100

Patent

active

060543930

ABSTRACT:
A method for semiconductor wafer etching clean-up comprising the steps of placing an oxide layer on a silicon wafer, cleaning the wafer surface with an etching agent cleaning solution, such as hydrofluoric acid, and washing the wafer surface with a cleaning solution, prior to an isopropanol vapor dry in order to reduce the number of defects caused by the formation of watermarks on the wafer surface.

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patent: 4917123 (1990-04-01), McConnell et al.
patent: 5278448 (1994-01-01), Fujii
patent: 5308400 (1994-05-01), Chen
patent: 5328867 (1994-07-01), Chien et al.

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