Method for improving the planarization of dielectric layer in th

Details Method for improving the planarization of dielectric layer in th Method for improving the planarization of dielectric layer in th

1997-08-06

2000-01-04

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438631, 438632, 438634, 438637, 438645, 438646, 438937, H01L 214763

Patent

active

060109580

ABSTRACT:
A method for improving the planarization of a dielectric layer in the fabrication of metallic interconnects wherein a rapid thermal processing operation is used in order to consolidate exposed surfaces of a dielectric layer after local planarization of the dielectric layer. This method avoids damage to the dielectric layer caused during a pre-metal etching operation, and consequently, prevents residual tungsten from becoming lodged in fissures during subsequent tungsten deposition to produce stringers which may cause short circuiting on coming in contact with metal wiring.

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