Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-24
2000-08-22
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438683, 438643, 438648, 438656, 438660, 438680, H01L 2144
Patent
active
061071994
ABSTRACT:
A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via concurrent introduction into the CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 ; and annealing the treated layer at the deposition temperature.
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Allen Russell D.
McFeely F. Read
Noyan Cevdet I.
Yurkas John J.
Beck Thomas A.
Gurley Lynne A.
International Business Machines - Corporation
Niebling John F.
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