Method for improving the intermediate dielectric profile, partic

Details Method for improving the intermediate dielectric profile, partic Method for improving the intermediate dielectric profile, partic

1997-07-22

2000-08-15

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 29788

Patent

active

061040584

ABSTRACT:
A method for improving the intermediate dielectric profile, particularly for non-volatile memories constituted by a plurality of cells, including the following steps: forming field oxide regions and drain active area regions on a substrate; forming word lines on the field oxide regions; depositing oxide to form oxide wings that are adjacent to the word lines; opening, by masking, source regions and the drain active area regions, keeping the field oxide regions that separate one memory cell from the other, inside the memory, covered with resist; and removing field oxide in the source regions and removing oxide wings from both sides of the word lines.

REFERENCES:
patent: 5087584 (1992-02-01), Wada et al.
patent: 5256584 (1993-10-01), Hartmann
patent: 5330924 (1994-07-01), Huang
patent: 5432749 (1995-07-01), Sethi

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