Method for improving surface roughness of processed film of...

Details Method for improving surface roughness of processed film of... Method for improving surface roughness of processed film of...

2011-01-25

2011-01-25

Walke, Amanda C. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Finishing or perfecting composition or product

C430S270100, C430S311000, C430S330000

Reexamination Certificate

active

07875420

ABSTRACT:
To improve the surface roughness of a resist film formed on a wafer.In a coating and developing treatment system, a wafer W on which a resist film has been formed and subjected to exposure and developing treatment is adjusted to a predetermined temperature. A solvent gas is supplied to the surface of the temperature-adjusted wafer W to dissolve the surface of the resist film. The wafer W is then heated to volatilize the solvent in the resist film to thereby heat shrink the resist film. This levels the projections and depressions on the surface of the resist film so as to improve the surface roughness of the resist film.

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