Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-18
2007-12-18
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S658000
Reexamination Certificate
active
10697137
ABSTRACT:
Doping copper interconnects (100) with silicon (115) has been shown to improve Electromigration and Via Stress Migration reliability. After copper (118) is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiH4over the copper interconnect (100) for 0.5 to 5 seconds at a temperature of 325-425° C.
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Barth Michael D.
West Jeffrey A.
Zuhoski Steven P.
Brady III W. James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Wilczewski M.
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