Method for improving optical proximity effect in storage node pa

Details Method for improving optical proximity effect in storage node pa Method for improving optical proximity effect in storage node pa

1998-04-21

2000-05-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438800, 438 16, H01L 2131, H01L 21469

Patent

active

060572493

ABSTRACT:
A semiconductor mask has storage node patterns (101a, 101b, 101c, 101d) defining a first region and a second region. Serifs (10) are provided adjacent comers of the storage node patterns for reducing optical proximity effects. Diffraction bars (202) are positioned between the patterns in the first region. In alternative embodiments of the invention, a diffraction bar (702, 802) is situated adjacent patterns that are variously arranged and configured with respect to the diffraction bar.

REFERENCES:
patent: 4200396 (1980-04-01), Kleinknecht et al.
patent: 4330213 (1982-05-01), Kleinknecht et al.
patent: 4964726 (1990-10-01), Kleinknecht et al.

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