Method for improving OPC modeling

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C378S035000, C382S144000, C382S154000, C382S165000, C382S190000, C382S170000, C250S311000, C702S040000, C702S172000

Reexamination Certificate

active

06934929

ABSTRACT:
The invention provides a method for OPC modeling. The procedure for tuning a model involves collecting cross-section images and critical dimension measurements through a matrix of focus and exposure settings. These images would then run through a pattern recognition system to capture top critical dimensions, bottom critical dimensions, resist loss, profile and the diffusion effects through focus and exposure.

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