Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2001-09-29
2003-08-12
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S778000, C438S780000, C438S795000
Reexamination Certificate
active
06605549
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to integrated circuit manufacture and more particularly to a method to improve nucleation and adhesion of a film/layer deposited onto a low-dielectric constant (low-k) dielectric layer, a high-dielectric constant (high-k) gate dielectric layer, or a high-k capacitor dielectric layer.
2. Description of Related Art
In integrated circuit (IC) manufacturing, as metal pitch scales to 0.2 microns and below, physical vapor deposition (PVD) of a barrier material layer is no longer able to provide sufficient step coverage and alternative technologies must be employed. For these alternative technologies, which include chemical-vapor deposition (CVD) and atomic layer deposition (ALD), film/layer nucleation and/or adhesion onto a substrate is critical. This is especially essential for low-dielectric constant (low-k) polymeric dielectrics that have surface active sites typically below 1×10
3
atoms per square centimeter (atom/cm
2
) compared to 1×10
14-15
atom/cm
2
in silicon oxide (SiO
x
). Similar concerns apply to low-dielectric constant dielectrics, such as organic-containing silicon dioxide or carbon-doped oxide (CDO), whose wettability or sticking coefficient can be low due to Si—CH
3
surface.
One approach to improve CVD- and ALD-deposited film nucleation and/or adhesion onto low-k dielectrics includes selecting a material as dielectric substrate which may not have the desired dielectric constant performance. Another technique to improve CVD- or ALD-deposited film nucleation and/or adhesion onto low-k dielectrics is to use only certain types of materials for the film/layer, e.g. barrier layer, deposited which may limit the performance of the integrated circuit manufactured. Another approach for improving film nucleation and/or adhesion onto low-k dielectrics is using undesired process conditions, such as high temperatures, to process the substrate having the CVD film.
REFERENCES:
patent: 5869149 (1999-02-01), Denison et al.
patent: 6022815 (2000-02-01), Doyle et al.
patent: 6043551 (2000-03-01), Seshan
patent: 6051869 (2000-04-01), Pan et al.
patent: 6054376 (2000-04-01), Balakrishnan
patent: 6054379 (2000-04-01), Yau et al.
patent: 6080526 (2000-06-01), Yang et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6097095 (2000-08-01), Chung
patent: 6121159 (2000-09-01), Pasch
patent: 6133163 (2000-10-01), Tanaka et al.
patent: 6143647 (2000-11-01), Pan et al.
patent: 6143659 (2000-11-01), Leem
patent: 6153512 (2000-11-01), Chang et al.
patent: 6174377 (2001-01-01), Doering et al.
patent: 6187660 (2001-02-01), Gardner
patent: 6204201 (2001-03-01), Ross
patent: 6204204 (2001-03-01), Paranjpe et al.
patent: 6218317 (2001-04-01), Allada et al.
patent: 6221440 (2001-04-01), Meyer et al.
patent: 6226171 (2001-05-01), Beilin et al.
patent: 6242339 (2001-06-01), Aoi
patent: 6258407 (2001-07-01), Lee et al.
patent: 6265243 (2001-07-01), Katz et al.
patent: 6265303 (2001-07-01), Lu et al.
patent: 0678913 (1995-10-01), None
patent: 0881678 (1998-12-01), None
patent: 1077480 (2001-02-01), None
International Search Report PCT/US 02/30792.
Kloster Grant M.
Leu Jihperng
Wu Chih-I
Zhou Ying
Blakely , Sokoloff, Taylor & Zafman LLP
Ghyka Alexander
LandOfFree
Method for improving nucleation and adhesion of CVD and ALD... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for improving nucleation and adhesion of CVD and ALD..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving nucleation and adhesion of CVD and ALD... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3094347